Abstract

Transition metal oxide TFTs were fabricated on afabric substrate for wearable display. Atomic layer deposition (ALD) wasemployed to reduce process temperature. The gate electrode (Ti/Al/Ti) wasdeposited by thermal evaporation. The gate insulator and channel layer were Al₂O₃and ZnO, respectively. Ti/Al was deposited by thermal evaporation to make thesource and drain contacts for ZnO TFTs. The TFT fabricated on the fabricsubstrate showed TFT driving behavior with the following performances: μ_FE= 0.6 cm²/V-s, on off ratio = 9.0710², Sub-threshold Swing = 1.725 decade^-1, V_th= -1.57 V. The results confirmed that it may be feasible to apply our lowtemperature fabrication of TFTs using the ALD process to wearable displaysbased on fabric substrates.